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| Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V ID (A)b - 2.4 - 2.0 FEATURES * Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1 Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 0.72 0.9 0.57 - 55 to 150 - 2.4 - 1.9 - 10 - 0.6 0.7 0.45 W C 5s - 20 8 - 2.2 - 1.8 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b Symbol RthJA Typical 120 140 Maximum 145 175 Unit C/W Maximum Junction-to-Ambientc Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72066 S-80427-Rev. D, 03-Mar-08 www.vishay.com 1 Si2301BDS Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingc Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 ID - 1.0 A, VGEN = - 4.5 V Rg = 6 20 40 30 20 30 60 45 30 ns Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = 0 V, f = 1 MHz VDS = - 6 V, VGS = - 4.5 V ID - 2.8 A 4.5 0.7 1.1 375 95 65 pF 10 nC VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 C VDS - 5 V, VGS = - 4.5 V VDS - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5 V, ID = - 2.0 A VDS = - 5 V, ID = - 2.8 A IS = - 0.75 A, VGS = 0 V -6 -3 0.080 0.110 6.5 - 0.80 - 1.2 0.100 0.150 - 20 - 0.45 - 0.95 100 -1 - 10 V nA A A S V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test: pulse width 300 s duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72066 S-80427-Rev. D, 03-Mar-08 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 VGS = 5 thru 2.5 V 10 TC = - 55 C 8 8 I D - Drain Current (A) 2V 6 I D - Drain Current (A) 25 C 6 125 C 4 1.5 V 2 1V 0 0 1 2 3 4 5 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.5 800 Transfer Characteristics R DS(on) - On-Resistance () 0.4 600 0.3 C - Capacitance (pF) 400 Ciss 0.2 VGS = 2.5 V 0.1 VGS = 4.5 V 0.0 0 2 4 6 8 10 200 Coss Crss 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 2.8 A VGS - Gate-to-Source Voltage (V) 4 R DS(on) - On-Resistance 1.4 1.6 VGS = 4.5 V ID = 2.8 A Capacitance (Normalized) 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72066 S-80427-Rev. D, 03-Mar-08 www.vishay.com 3 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 0.6 0.5 I S - Source Current (A) TJ = 150 C R DS(on) - On-Resistance () 0.4 ID = 2.8 A 0.3 1 TJ = 25 C 0.2 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 10 On-Resistance vs. Gate-to-Source Voltage 0.3 8 VGS(th) Variance (V) 0.2 ID = 250 A 0.1 Power (W) 6 4 TA = 25 C 0.0 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 Time (s) 100 1000 TJ - Temperature (C) Threshold Voltage 100 Single Pulse Power 10 I D - Drain Current (A) Limited by RDS(on)* 1 10 s 100 s 1 ms 10 ms TA = 25 C Single Pulse 0.1 100 ms DC, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Square Wave Pulse Duration (s) Safe Operating Area www.vishay.com 4 Document Number: 72066 S-80427-Rev. D, 03-Mar-08 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72066. Document Number: 72066 S-80427-Rev. D, 03-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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